Switching to Spintronics

Berkeley Lab Reports on Electric Field Switching of Ferromagnetism at Room Temp

Wednesday, December 17, 2014 to Thursday, December 18, 2014

In a development that holds promise for future magnetic memory and logic devices, researchers with the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) and Cornell University successfully used an electric field to reverse the magnetization direction in a multiferroic spintronic device at room temperature. This demonstration, which runs counter to conventional scientific wisdom, points a new way towards spintronics and smaller, faster and cheaper ways of storing and processing data.
“Our work shows that 180-degree magnetization switching in the multiferroic bismuth ferrite can be achieved at room temperature with an external electric field when the kinetics of the switching involves a two-step process,” says Ramamoorthy Ramesh, Berkeley Lab’s Associate Laboratory Director for Energy Technologies, who led this research. “We exploited this multi-step switching process to demonstrate energy-efficient control of a spintronic device.”

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Lynn Yarris