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The Crommie group has developed a new technique for locally gating nanoscale regions of atomically-clean graphene by injecting charge directly into the boron nitride (BN) insulator just below the graphene.1,2 Both polarities of charge can be independently implanted at different locations in the insulator by using a scanning tunneling microscope (STM) tip. This allows nanoscale confinement potentials to be “drawn” directly into graphene, thus allowing the graphene electronic wavefunction to be directly manipulated. The resulting graphene wavefunctions can then be imaged using STM spectroscopic techniques.2